Home > Electronic IC Chips >

SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

Product Categories

ChongMing Group (HK) Int'l Co., Ltd

Contact Now

SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

Model Number : SI4435DY

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Drain-Source Voltage : –30 V

Gate-Source Voltage : ±20 V

Drain Current – Continuous : –8.8 A

Power Dissipation for Single Operation : 2.5 W

Operating and Storage Junction Temperature Range : –55 to +175 °C

Thermal Resistance, Junction-to-Case : 25 °C/W

Contact Now

SI4435DY

30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications

· Power management

· Load switch

· Battery protection

Features

· –8.8 A, –30 V R_DS(ON) = 20 mW @ VGS = –10 V

R_DS(ON)= 35 mW @ VGS = –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current – Continuous (Note 1a) – Pulsed	–8.8	A
I_D	Drain Current – Continuous (Note 1a) – Pulsed	–50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
T_J, T_STG	Operating and Storage Junction Temperature Range	–55 to +175	°C

Thermal Characteristics

R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	°C/W
R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1c)	125	°C/W
R_θJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

Package Marking and Ordering Information

Device Marking	Device	Reel Size	Tape width	Quantity
SI4435DY	SI4435DY	13’’	12mm	2500 units

Product Tags:

power mosfet ic

silicon power transistors

Buy cheap SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET product

SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	ChongMing Group (HK) Int'l Co., Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!